Полупроводници - страница 180

2N2926 Uni, 25V, 0,1A, 0,2W, 300MHz, б>35

2.20

 

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2N2907A Uni, 60/40V, 0,4A, 0,8W, >200MHz, B>100

0.15

 

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2N2646 2N4871 SI-P UNIJUCTION TRANSISTOR Ip<5µA, Iv>4mA BASE1 BASE2 EMITER

4.70

 

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2N2369 N 40V 0.2A 0.36W SS, 40V, 0,2A, 0,36W, <12/15ns, B>40

0.46

 

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2N2222A-DIO Транзистор: NPN биполярен 40V 600mA 625mW TO92

0.18

 

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2N2222A/MET Транзистор: биполярен, NPN; 40V; 800mA; 500mW; TO18

1.22

 

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2N2219 Uni, 60V, 0,8A, 0,8W, >250MHz, B>100

0.85

 

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M27C512-10F1 DIP-28 512 Kbit 64Kb x8 UV EPROM and OTP EPROM

5.50

 

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27C256-120 smd

4.60

 

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27C128 27C128

8.40

 

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27C010-150 27C1001

12.00

 

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27C64-150 Integrated circuit, 27C64-150 Integrated circuit, UV EPROM 5V 8Kx8 150

12.20

 

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60F30A TO-3P SL IF(AV) 30 A?2 VRRM 300 V Tj(max) 150? VF(typ) 1.05V trr(typ) 40ns

5.80

 

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2716 2716

1.00

 

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AT27C512R-12JC 32PIN PLCC 512K 64K x 8 OTP CMOS EPROM

6.50

 

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NTE27C1001-12D Памет EPROM; паралелен; Монтаж: THT; -40?125°C; Кут: DIP32; 5V; 35ns

19.20

 

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24C64N Памет: EEPROM; I2C; 8kx 24C64N Памет: EEPROM; I2C; 8kx8bit; 4,5?5,5V; DIP8

1.10

 

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M24C32-WBN6P DIP8 M24C32-WBN6P Памет:EEPROM; I2C; 4kx8bit; 2,5V?5,5V

0.68

 

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M24C16-WMN6P Памет EEPROM; I2C; 2kx8bit; 2,5?5,5V; SO8; последователен

0.49

 

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M24C16-WBN6P Памет; EEPROM; I2 M24C16-WBN6P Памет; EEPROM; I2C; 2kx8bit; 2,5?5,5V

0.58

 

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24C08B1 Integrated circuit, EE 24C08B1 Integrated circuit, EEPROM serial 5V 1Kx8

0.53

 

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24C08CM1-SMD 24C08CM1-SMD Integrated circuit, EEPROM serial 5V

0.63

 

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M24C08-WBN6P M24C08-WBN6P Integrated circuit EEPROM I2C 1kx8 2,

0.44

 

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M24C04-WMN6P Памет; EEPROM; I2C; 512x8bit; 2,5?5,5V; SO8

0.48

 

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