Полупроводници - страница 180

27C256-120 smd

4.60

 

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27C128 27C128

8.40

 

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27C010-150 27C1001

12.00

 

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27C64-150 Integrated circuit, 27C64-150 Integrated circuit, UV EPROM 5V 8Kx8 150

12.20

 

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60F30A TO-3P SL IF(AV) 30 A?2 VRRM 300 V Tj(max) 150? VF(typ) 1.05V trr(typ) 40ns

5.80

 

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2716 2716

1.00

 

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AT27C512R-12JC 32PIN PLCC 512K 64K x 8 OTP CMOS EPROM

6.50

 

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NTE27C1001-12D Памет EPROM; паралелен; Монтаж: THT; -40?125°C; Кут: DIP32; 5V; 35ns

19.20

 

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24C64N Памет: EEPROM; I2C; 8kx 24C64N Памет: EEPROM; I2C; 8kx8bit; 4,5?5,5V; DIP8

1.10

 

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M24C32-WBN6P DIP8 M24C32-WBN6P Памет:EEPROM; I2C; 4kx8bit; 2,5V?5,5V

0.68

 

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M24C16-WMN6P Памет EEPROM; I2C; 2kx8bit; 2,5?5,5V; SO8; последователен

0.49

 

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M24C16-WBN6P Памет; EEPROM; I2 M24C16-WBN6P Памет; EEPROM; I2C; 2kx8bit; 2,5?5,5V

0.58

 

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24C08B1 Integrated circuit, EE 24C08B1 Integrated circuit, EEPROM serial 5V 1Kx8

0.53

 

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24C08CM1-SMD 24C08CM1-SMD Integrated circuit, EEPROM serial 5V

0.63

 

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M24C08-WBN6P M24C08-WBN6P Integrated circuit EEPROM I2C 1kx8 2,

0.44

 

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M24C04-WMN6P Памет; EEPROM; I2C; 512x8bit; 2,5?5,5V; SO8

0.48

 

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M24C04-WBN6P Памет; EEPROM; I2C; 512x8bit; 2,5?5,5V; DIP

0.42

 

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M24C02-WBN6P Памет; EEPROM; I2 M24C02-WBN6P Памет; EEPROM; I2C; 256x8/128x16bit;

0.55

 

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M24C01-WBN6P Памет; EEPROM; I2 M24C01-WBN6P Памет; EEPROM; I2C; 128x8bit; 2,5?5,5

0.55

 

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Диод P6SMB6.8A-TSC Диод: TVS; 600W; 6,8V; 60A; еднопосочна; ±5%; SMB; ролка,лента; P6SMB

0.45

 

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1L0380 1H0380 1M0380 POWER SWITCH

3.32

 

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PIC16F883-I/SP IC: микроконтролер PIC; Памет: 7kB; SRAM: 256B; EEPROM: 256B; 20MHz

7.68

 

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15/85R тиристор THYRISTOR+DIODE 900V 5.5A

12.80

 

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14CL40 TO263 IGBT N-Ch Vces=400V Ic=14A 262W BTS2140-1B

11.64

 

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