TK15A50DQM N-CH 500V, 15A TK15A50DQM MOSFET MOSFET N-CH 500V, 15A
Арт.№: TK15A50DQM N-CH 500V, 15A

1 от 1

Поставените снимки са с илюстративен характер. В действителност продуктът може да се отличава външно, като това не променя функционалността и характеристиките на изделието.
Информация
TK15A50DQM MOSFET MOSFET N-CH 500V, 15A
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Details
Brand:
Toshiba
Id - Continuous Drain Current:
15 A
Vds - Drain-Source Breakdown Voltage:
500 V
Rds On - Drain-Source Resistance:
300 mOhms
Transistor Polarity:
N-Channel
Vgs - Gate-Source Breakdown Voltage:
30 V
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Mounting Style:
Through Hole
Package / Case:
SC-67-3
Packaging:
Tray
Channel Mode:
Enhancement
Configuration:
Single
Fall Time:
25 ns
Minimum Operating Temperature:
- 55 C
Rise Time:
50 ns
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Details
Brand:
Toshiba
Id - Continuous Drain Current:
15 A
Vds - Drain-Source Breakdown Voltage:
500 V
Rds On - Drain-Source Resistance:
300 mOhms
Transistor Polarity:
N-Channel
Vgs - Gate-Source Breakdown Voltage:
30 V
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
50 W
Mounting Style:
Through Hole
Package / Case:
SC-67-3
Packaging:
Tray
Channel Mode:
Enhancement
Configuration:
Single
Fall Time:
25 ns
Minimum Operating Temperature:
- 55 C
Rise Time:
50 ns