J6920 J6920
Арт.№: FJL6920 ORIGINAL SAMSUNG
1 от 1
Поставените снимки са с илюстративен характер. В действителност продуктът може да се отличава външно, като това не променя функционалността и характеристиките на изделието.
ППЦ:
лв.
лв.
19.50
лв.
Валидност на промоцията
до
Налично
Добави в любими
Твоите любими продукти
Информация
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
* Pulse Test: PW=300мs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=20мs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Parameter Rating Units
VCBO Collector-Base Voltage 1700 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 20 A
ICP* Collector Current (Pulse) 30 A
PC Collector Dissipation 200 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 мA
IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA
BVCBO Collector-Base Breakdown Voltage IC=500мA, IE=0 1700 V
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
BVEBO Emitter-Base Breakdown Voltage IE=500мA, IC=0 6 V
hFE1
hFE2
DC Current Gain VCE=5V, IC=1A
VCE=5V, IC=11A
8
5.5 8.5
VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V
tSTG* Storage Time VCC=200V, IC=10A, RL=20Щ
IB1=2.0A, IB2= - 4.0A
3 мs
tF* Fall Time 0.15 0.2 мs
Symbol Parameter Typ Max Units
RиjC Thermal Resistance, Junction to Case 0.625 °C/W
Absolute Maximum Ratings TC=25°C unless otherwise noted
* Pulse Test: PW=300мs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=20мs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Parameter Rating Units
VCBO Collector-Base Voltage 1700 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 20 A
ICP* Collector Current (Pulse) 30 A
PC Collector Dissipation 200 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 мA
IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA
BVCBO Collector-Base Breakdown Voltage IC=500мA, IE=0 1700 V
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
BVEBO Emitter-Base Breakdown Voltage IE=500мA, IC=0 6 V
hFE1
hFE2
DC Current Gain VCE=5V, IC=1A
VCE=5V, IC=11A
8
5.5 8.5
VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V
tSTG* Storage Time VCC=200V, IC=10A, RL=20Щ
IB1=2.0A, IB2= - 4.0A
3 мs
tF* Fall Time 0.15 0.2 мs
Symbol Parameter Typ Max Units
RиjC Thermal Resistance, Junction to Case 0.625 °C/W
