HUF75345G3 TO-247 HUF75345G3 TO-247 75A, 55V, 0.007 Ohm, N-Channel
Арт.№: HUF75345G3 TO-247
Принтирай
ППЦ:
лв.
лв.
24.00
лв.
Валидност на промоцията
до
Налично
Добави в любими
Твоите любими продукти Информация
HUF75345G3 TO-247 75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, lowvoltage
bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75345.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75345G3 TO-247 75345G
HUF75345P3 TO-220AB 75345P
HUF75345S3S TO-263AB 75345S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, lowvoltage
bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75345.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75345G3 TO-247 75345G
HUF75345P3 TO-220AB 75345P
HUF75345S3S TO-263AB 75345S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST