HGTP12N60A4 TO-220 600V 54A
Арт.№: HGTP12N60A4 TO-220
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Информация
HGTP12N60A4 TO-220 600V 54A
Описание IGBT, N, TO-220
Transistor Type:IGBT
Max Voltage Vce Sat:2.7V
Collector-to-Emitter Breakdown Voltage:600V
No. of Pins:3
SVHC:Cobalt dichloride
Case Style:TO-220AB
Current Temperature:25°C
Fall Time Tf:18ns
Full Power Rating Temperature:25°C
Max Current Ic Continuous a:54A
Max Power Dissipation Ptot:167W
No. of Transistors:1
Pin Format:GCE
Power Dissipation:167W
Power Dissipation Pd:167W
Pulsed Current Icm:96A
Rise Time:8ns
Termination Type:Through Hole
Transistor Polarity:N
Voltage Vces:600V
SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
Описание IGBT, N, TO-220
Transistor Type:IGBT
Max Voltage Vce Sat:2.7V
Collector-to-Emitter Breakdown Voltage:600V
No. of Pins:3
SVHC:Cobalt dichloride
Case Style:TO-220AB
Current Temperature:25°C
Fall Time Tf:18ns
Full Power Rating Temperature:25°C
Max Current Ic Continuous a:54A
Max Power Dissipation Ptot:167W
No. of Transistors:1
Pin Format:GCE
Power Dissipation:167W
Power Dissipation Pd:167W
Pulsed Current Icm:96A
Rise Time:8ns
Termination Type:Through Hole
Transistor Polarity:N
Voltage Vces:600V
SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
