FQA38N30 MOSFET 300V N-Channel QFET 38.4A
Арт.№: FQA38N30 MOSFET 300V N-CHANNEL QFET 38.4A
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FQA38N30 MOSFET 300V N-Channel QFET 38.4A
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 38.4 A
Rds On - Drain-Source Resistance: 85 mOhms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Channel Mode: Enhancement
Packaging: Tube
Height: 20.1 mm
Length: 16.2 mm
Series: FQA38N30
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 5 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 24 S
Fall Time: 190 ns
Pd - Power Dissipation: 290 W
Rise Time: 430 ns
Factory Pack Quantity: 450
Typical Turn-Off Delay Time: 170 ns
Typical Turn-On Delay Time: 80 ns
Part # Aliases: FQA38N30_NL
Unit Weight: 6,401 g
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 38.4 A
Rds On - Drain-Source Resistance: 85 mOhms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Channel Mode: Enhancement
Packaging: Tube
Height: 20.1 mm
Length: 16.2 mm
Series: FQA38N30
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 5 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 24 S
Fall Time: 190 ns
Pd - Power Dissipation: 290 W
Rise Time: 430 ns
Factory Pack Quantity: 450
Typical Turn-Off Delay Time: 170 ns
Typical Turn-On Delay Time: 80 ns
Part # Aliases: FQA38N30_NL
Unit Weight: 6,401 g