2MBI100TA-060-50 МОДУЛ IGBT 2MBI100TA-060-50 100A 600V
Арт.№: МОДУЛ IGBT 100A 2MBI100TA-060
1 от 1
Поставените снимки са с илюстративен характер. В действителност продуктът може да се отличава външно, като това не променя функционалността и характеристиките на изделието.
Информация
2MBI100TA-060-50 Информация за продукта
IGBT, DUAL, MODULE, 100A, 600V, NPT
Module Configuration: Dual
Transistor Polarity: N Channel
DC Collector Current: 100A
Collector Emitter Voltage Vces: 2.4V
Power Dissipation Pd: 310W
Collector Emitter Voltage V(br)ceo: 600V
Transistor Case Style: Module
No. of Pins: 7
Current Ic @ Vce Sat: 100A
Current Ic Continuous a Max: 100A
Current Temperature: 25°C
External Depth: 34mm
External Length / Height: 30mm
External Width: 92mm
Fall Time tf: 400ns
Full Power Rating Temperature: 25°C
Isolation Voltage: 2.5kV
Junction Temperature Tj Max: 150°C
No. of Transistors: 2
Package / Case: M232
Power Dissipation Max: 310W
Power Dissipation Pd: 310W
Power Dissipation Pd: 310W
Pulsed Current Icm: 200A
Rise Time: 400ns
Termination Type: Screw
Voltage Vces: 600V
IGBT, DUAL, MODULE, 100A, 600V, NPT
Module Configuration: Dual
Transistor Polarity: N Channel
DC Collector Current: 100A
Collector Emitter Voltage Vces: 2.4V
Power Dissipation Pd: 310W
Collector Emitter Voltage V(br)ceo: 600V
Transistor Case Style: Module
No. of Pins: 7
Current Ic @ Vce Sat: 100A
Current Ic Continuous a Max: 100A
Current Temperature: 25°C
External Depth: 34mm
External Length / Height: 30mm
External Width: 92mm
Fall Time tf: 400ns
Full Power Rating Temperature: 25°C
Isolation Voltage: 2.5kV
Junction Temperature Tj Max: 150°C
No. of Transistors: 2
Package / Case: M232
Power Dissipation Max: 310W
Power Dissipation Pd: 310W
Power Dissipation Pd: 310W
Pulsed Current Icm: 200A
Rise Time: 400ns
Termination Type: Screw
Voltage Vces: 600V
