HUF75339P3 MOS-N-FET Vdss=55V Id=75A 200W 12mohm
Арт.№: HUF75339P3
Принтирай
1 от 1
Поставените снимки са с илюстративен характер. В действителност продуктът може да се отличава външно, като това не променя функционалността и характеристиките на изделието.
ППЦ:
лв.
лв.
4.60
лв.
Валидност на промоцията
В наличност
Добави в любими
Твоите любими продукти
Информация
HUF75339P3 Спецификация
Continuous Drain Current Id
75A
Current Id Max
75A
Drain Source Voltage Vds
55V
No. of Pins
3
On Resistance Rds(on)
12mohm
Operating Temperature Range
-55°C to +175°C
Power Dissipation Pd
200W
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Transistor Case Style
TO-220AB
Transistor Polarity
N Channel
Voltage Vgs Max
4V
Current Temperature
25°C
Device Marking
HUF75339P3
Full Power Rating Temperature
25°C
No. of Transistors
1
On State Resistance Max
12mohm
Package / Case
TO-220AB
Pulse Current Idm
160A
SVHC
No SVHC (18-Jun-2012)
Termination Type
Through Hole
Voltage Vds Typ
55V
Voltage Vgs Rds on Measurement
10V
Voltage Vgs th Max
4V
Continuous Drain Current Id
75A
Current Id Max
75A
Drain Source Voltage Vds
55V
No. of Pins
3
On Resistance Rds(on)
12mohm
Operating Temperature Range
-55°C to +175°C
Power Dissipation Pd
200W
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Transistor Case Style
TO-220AB
Transistor Polarity
N Channel
Voltage Vgs Max
4V
Current Temperature
25°C
Device Marking
HUF75339P3
Full Power Rating Temperature
25°C
No. of Transistors
1
On State Resistance Max
12mohm
Package / Case
TO-220AB
Pulse Current Idm
160A
SVHC
No SVHC (18-Jun-2012)
Termination Type
Through Hole
Voltage Vds Typ
55V
Voltage Vgs Rds on Measurement
10V
Voltage Vgs th Max
4V
